2sa505.pdf datasheet:

isc Silicon PNP Power Transistor 2SA505DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -50V (Min.)(BR)CEOCollector-Emitter Saturation Voltage-V = -0.8V (Max.)@ I = -500mACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -60 VCBOV Collector-Emitter Voltage -50 VCEOV Emitter-Base Voltage -5.0 VEBOI Collector Current-Continuous -1 ACI Emitter Current-Continuous 1 AEP Collector Power Dissipation 1 WCT Junction Temperature 150 JT Storage Temperature Range -55~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silicon PNP Power Transistor 2SA505ELECTRICAL CHARACTERISTICST =25 unless otherwise