2sc1623.pdf datasheet:

DATA SHEETSILICON TRANSISTOR2SC1623AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORMINI MOLDFEATURESPACKAGE DIMENSIONS High DC Current Gain: hFE = 200 TYP.in millimeters(VCE = 6.0 V, IC = 1.0 mA)2.8 0.2 High Voltage: VCEO = 50 V1.5 0.65+0.10.15ABSOLUTE MAXIMUM RATINGSMaximum Voltages and Current (TA = 25 C)2Collector to Base Voltage VCBO 60 VCollector to Emitter Voltage VCEO 50 V31Emitter to Base Voltage VEBO 5.0 VCollector Current (DC) IC 100 mAMaximum Power DissipationTotal Power DissipationMarkingat 25 C Ambient Temperature PT 200 mWMaximum TemperaturesJunction Temperature Tj 150 CStorage Temperature Range Tstg 55 to +150 C1: Emitter2: Base3: CollectorELECTRICAL CHARACTERISTICS (TA = 25 C)CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONSCollector Cutoff