2sc2757.pdf datasheet:

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC2757DESCRIPTIONLow NoiseHigh Current-Gain Bandwidth ProductMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in VHF RF amplifier, local oscillator, mixer.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 30 VCBOV Collector-Emitter Voltage 15 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current-Continuous 50 mACCollector Power DissipationP 0.15 WC@T =25CT Junction Temperature 125 JStorage Temperature Range -55~125 Tstg1isc websitewww.iscsemi.cn isc & iscsemi is registered trademarkINCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC2757ELECTRICAL CHARACTERISTICST =25 unless otherwise specifiedCSYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNI