2sc6026.pdf datasheet:

2SC6026 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026 General-Purpose Amplifier Applications Unit: mm High voltage and high current : VCEO = 50 V, IC = 100 mA (max) Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) High hFE hFE = 120~400 : Complementary to 2SA2154 13Absolute Maximum Ratings (Ta = 25C) 20.80.050.10.051.00.05Characteristic Symbol Rating UnitCollector-base voltage VCBO 60 VCollector-emitter voltage VCEO 50 VEmitter-base voltage VEBO 5 V 0.10.05Collector current IC 100 mA1.BASE Base current IB 30 mA2.EMITTER Collector power dissipation PC 50 mW fSM 3.COLLECTORJunction temperature Tj 150 CJEDEC Storage temperature range Tstg -55~150 CJEITA Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-1E1A