2sc945.pdf datasheet:

ST 2SC945 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA733 is recommended. On special request, these transistors can be 1. Emitter 2. Collector 3. Base manufactured in different pin configurations. TO-92 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 50 VEmitter Base Voltage VEBO 5 VCollector Current IC 150 mAPower Dissipation Ptot 250 mWOJunction Temperature Tj 150 C OStorage Temperature Range Tstg - 55 to + 150 C OCharacteristics at Ta = 25 C Parameter Symbol Min. Typ. Max. Unit DC Current Gain at VCE = 6 V, IC = 1 mA Current Gain Group R hFE 40 - 80 -