2sc945lt1.pdf datasheet:

SEMICONDUCTOR 2SC945LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR Package:SOT-23 * Collector Current: Ic= 150mA * Collector-Emitter Voltage:Vce= 50V * High Total Power Dissipation:Pc=225mW * High Hfe And Good Linearity ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating UnitCollector-Base Voltage Vcbo 60 V PIN: 1 2 3Collector-Emitter Voltage Vceo 50 V STYLE Emitter-Base Voltage Vebo 5 NO.1 B E CCollector Current Ic 150 mA Collector Dissipation Ta=25* PD 225 mWJunction Temperature Tj 150 Storage Temperature Tstg -55-150 ELECTRICAL CHARACTERISTICS at Ta=25 Characteristic Symbol Min Typ Max Unit Test ConditionsCollector-Base Breakdown Voltage BVcbo 60 V Ic=100uA Ie=0 Collector-Emitter Breakdown Voltage BVceo 50 V Ic= 1mA Ib=0 Emitter-Base Breakdown Voltage BV