2sd1047.pdf datasheet:

2SD1047High power NPN epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = 140 V Typical ft = 20 MHz Fully characterized at 125 oCApplication Power supply 321DescriptionTO-3PThe device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagramTable 1. Device summaryOrder code Marking Package Packaging2SD1047 2SD1047 TO-3P TubeApril 2011 Doc ID 018729 Rev 1 1/10www.st.com 10Electrical ratings 2SD10471 Electrical ratingsTable 2. Absolute maximum ratingsSymbol Parameter Value UnitVCBO Collector-base voltage (IE = 0) 200 VVCEO Collector-emitter voltage (IB = 0) 140 VVEBO Emitter-base voltage (IC = 0) 6 VIC Collector current 12 AICM Collector peak current