2sd1047e.pdf datasheet:

isc Product Specificationisc Silicon NPN Power Transistor 2SD1047EDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SB817EMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for audio frequency amplifier outputstage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 160 VCBOV Collector-Emitter Voltage 140 VCEOV Emitter-Base Voltage 6 VEBOI Collector Current-Continuous 12 ACI Collector Current-Pulse 15 ACPCollector Power DissipationP 100 WC@ T =25CT Junction Temperature 150 JT Storage Temperature Range -40~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registered trademark