2sd1304 e.pdf datasheet:

Transistor2SD1304Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm+0.22.8 0.3+0.25Features0.65 0.15 1.5 0.05 0.65 0.15Zener diode built in.Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and the magazinepacking.32Absolute Maximum Ratings (Ta=25C)0.1 to 0.3Parameter Symbol Ratings Unit0.4 0.2Collector to base voltage VCBO 20 3 VCollector to emitter voltage VCEO 20 3 VEmitter to base voltage VEBO 7 V1:Base JEDEC:TO2362:Emitter EIAJ:SC59Peak collector current ICP 200 mA3:Collector Mini Type PackageCollector current IC 100 mACollector power dissipation PC 200 mWMarking symbol : 2AJunction temperature Tj 150 CInternal ConnectionStorage temperature Tstg 55 ~ +150 CCBEElectrical Characteristics (Ta=25C)Par