2sd1500.pdf datasheet:

isc Silicon NPN Darlington Power Transistor 2SD1500DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 10AFE CLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 150 VCBOV Collector-Emitter Voltage 100 VCEOV Emitter-Base Voltage 8 VEBOI Collector Current-Continuous 10 ACI Base Current-Continuous 1 ABCollector Power DissipationP 40 WC@ T =25CT Junction Temperature 150 JT Storage Temperature Range -55~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silicon NPN Darlington Power Transistor 2SD1500ELECTRICAL CHAR

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