2sd2101.pdf datasheet:

2SD2101Silicon NPN Triple DiffusedApplicationLow frequency power amplifierOutlineTO-220FM211. Base2. Collector3. Emitter12 3 k 150 3(Typ) (Typ)32SD2101Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 200 VCollector to emitter voltage VCEO 200 VEmitter to base voltage VEBO 7VCollector current IC 10 ACollector peak current IC(peak) 15 ACollector power dissipation PC 2WPC*1 30Junction temperature Tj 150 CStorage temperature Tstg 55 to +150 CNote: 1. Value at TC = 25 C.Electrical Characteristics (Ta = 25C)Item Symbol Min Typ Max Unit Test conditionsCollector to base breakdown V(BR)CBO 200 V IC = 0.1 mA, IE = 0voltageCollector to emitter breakdown V(BR)CEO 200 V IC = 25 mA, RBE = voltageCollector to emitter sustain VCEO(SUS) 170 V IC