2sd2106.pdf datasheet:

2SD2106Silicon NPN EpitaxialApplicationLow frequency power amplifierOutlineTO-220FM211. BaseID2. Collector3. Emitter13 k 200 23(Typ) (Typ)32SD2106Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO 7VCollector current IC 6ACollector peak current IC(peak) 10 ACollector power dissipation PC 2WPC*1 25Junction temperature Tj 150 CStorage temperature Tstg 55 to +150 CNote: 1. Value at TC = 25 C.Electrical Characteristics (Ta = 25C)Item Symbol Min Typ Max Unit Test conditionsCollector to base breakdown V(BR)CBO 120 V IC = 0.1 mA, IE = 0voltageCollector to emitter breakdown V(BR)CEO 120 V IC = 25 mA, RBE = voltageEmitter to base breakdown V(BR)EBO 7 V IE = 50 mA,