2sd214.pdf datasheet:

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD214DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Sustaining Voltage-: V = 100V(Min.)CEO(SUS)Low Collector Saturation Voltage-High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Voltage 130 VCBOV Collector-Emitter Voltage 100 VCEOV Emitter-Base Voltage 6 VEBOI Collector Current-Continuous 10 ACI Collector Current-Peak 20 ACPCollector Power DissipationP 100 WC@T =25CT Junction Temperature 150 jT Storage Temperature Range -65~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkINCHANGE Semiconductorisc Sil