2sd2140.pdf datasheet:

isc Silicon NPN Power Transistor 2SD2140DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SB1421Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifications.Optimum for the output stage of a HiFi audio amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 140 VCBOV Collector-Emitter Voltage 140 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current-Continuous 7 ACI Collector Current-Pulse 12 ACPCollector Power Dissipation80@ T =25CP WCCollector Power Dissipation2.5@ T =25aT Junction Temperature 150 JT Storage Temperature Range -55~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarki