2sd2142k.pdf datasheet:

2SD2142K Transistors High-gain Amplifier Transistor (30V, 0.3A) 2SD2142K Dimensions (Unit : mm) Features 1) Darlington connection for a high hFE. SMT3(DC current gain = 5000 (Min.) at VCE = 3V, IC = 10mA) 2.9 1.12) High input impedance. 0.4 0.8(3) Inner circuit (2) (1)C0.95 0.950.151.9(1)Emitter(2)BaseB Each lead has same dimensions(3)CollectorE : EmitterC : CollectorEB : Base Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 30 VCollector-emitter voltage VCER 30 VEmitter-base voltage VEBO 10 VCollector current IC 0.3 ACollector power dissipation PC 0.2 WJunction temperature Tj 150 CStorage temperature Tstg -55 to +150 C Electrical characteristics (Ta=25 C) Parameter Symbol Min. Typ. Max. Unit ConditionsCollector-base breakdown voltage BVCBO 30 - -