2sd2144s.pdf datasheet:

2SD2114K / 2SD2144STransistorsHigh-current Gain MediumPower Transistor (20V, 0.5A)2SD2114K / 2SD2144S External dimensions (Units : mm) Features2SD2114K1) High DC current gain.2.90.21.1+0.21.90.2 -0.1 hFE = 1200 (Typ.)0.80.10.95 0.952) High emitter-base voltage.(1) (2)00.1 VEBO =12V (Min.)3) Low VCE (sat).(3) VCE (sat) = 0.18V (Typ.)+0.10.15-0.06+0.10.4-0.05 (IC / IB = 500mA / 20mA)All terminals have same dimensions(1) EmitterROHM : SMT3 (2) BaseEIAJ : SC-59 Abbreviated symbol: BB(3) Collector StructureEpitaxial planar type2SD2144S40.2 20.2NPN silicon transistor+0.150.45-0.05+0.4 +0.152.5 0.45-0.1 0.5 -0.055(1) (2) (3)ROHM : SPT (1) EmitterEIAJ : SC-72 (2) Collector(3) Base Denotes hFE Absolute maximum ratings (Ta=25C)Parameter Symbol Limits UnitCollector-bas