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2sj543.pdf datasheet:

2sj5432sj543

2SJ543 Silicon P Channel MOS FET REJ03G0890-0400 (Previous: ADE-208-652B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.042 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code: PRSS0004AC-A(Package name: TO-220AB)D1. GateG2. Drain (Flange)3. Source123SRev.4.00 Sep 07, 2005 page 1 of 7 2SJ543 Absolute Maximum Ratings (Ta = 25C) Item Symbol Value UnitDrain to source voltage V 60 VDSSGate to source voltage V 20 VGSSDrain current I 20 ADDrain peak current I Note 1 80 AD (pulse)Body to drain diode reverse drain current I 20 ADRAvalanche current I Note 3 20 AAPAvalanche energy E Note 3 34 mJARChannel dissipation Pch Note 2 75 WChannel temperature Tch 150 C

 

Keywords - ALL TRANSISTORS DATASHEET

 2sj543.pdf Design, MOSFET, Power

 2sj543.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sj543.pdf Database, Innovation, IC, Electricity

 

 
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