2sk2554.pdf datasheet:

2SK2554 Silicon N Channel MOS FET REJ03G1016-0600 (Previous: ADE-208-359D) Rev.6.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance RDS(on) = 4.5 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)D1. GateG2. Drain(Flange)3. Source1S23Rev.6.00 Sep 07, 2005 page 1 of 7 2SK2554 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitDrain to source voltage VDSS 60 VGate to source voltage VGSS 20 VDrain current ID 75 ADrain peak current ID(pulse)*1 300 ABody to drain diode reverse drain current IDR*2 75 AAvalanche current IAP*3 50 AAvalanche energy EAR*3 214 mJChannel dissipation Pch*2 150 WChannel temperature Tch 150 C Storage temperature Tstg 55 to +150