2sk566.pdf datasheet:

isc N-Channel MOSFET Transistor 2SK566FEATURESDrain Current I =2.9A@ T =25D CDrain Source Voltage-: V = 800V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor controls,relay and solenoid drivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 800 VDSSV Gate-Source Voltage-Continuous 20 VGSI Drain Current-Continuous 2.9 ADP Total Dissipation @T =25 78 WD CMax. Operating Junction Temperature 150 TJStorage Temperature -55~150 Tstg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc N-Channel MOSFET Transistor 2SK566ELECTRICA

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