4n60 4n60f.pdf datasheet:

GOFORD4N60/4N60F600V N-Channel MOSFETGENERAL DESCRIPTIONVDSS RDS(ON) IDThis Power MOSFET is produced usingadvanced planar stripe DMOS technology.600V 2.5 4AThis latest technology has been especiallydesigned to minimize on-state resistance,Have a high rugged avalanchecharacteristics.These devices are well suitedfor high efficiency switched mode powersupplies, active power factorcorrection.electronic lamp ballasts based onhalf bridge topology.Features 4A, 600V, RDS(on) = 2.5 @VGS = 10 V Ordering Information Low gate charge ( typical 16nC)PART NUMBER PACKAGE BRAND Fast switching 100% avalanche tested4N60/4N60F TO-220/220F 0GFD Improved dv/dt capabilityPage 1HTTP://www.gofordsemi.com TEL0755-29 961262 FAX0755-29961466GOFORD4N60/4N60FAbsolute Maximum Ratings TC = 25Cunless otherwise notedAbsolute Maximum