ad-mmbta56.pdf datasheet:

www.jscj-elec.com AD-MMBTA56 JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-MMBTA56 Plastic-Encapsulated Transistor AD-MMBTA56 Transistor (PNP) FEATURES General purpose amplifier applications AEC-Q101 qualified MARKING 2GM = Device code 2GM Version 1.0 1 / 6 2021-07-01 www.jscj-elec.com AD-MMBTA56 MAXIMUM RATINGS (T = 25C unless otherwise specified) j Parameter Symbol Value Unit Collector-base voltage V -80 V CBOCollector-emitter voltage V -80 V CEOEmitter-base voltage V -4 V EBOCollector continuous current I -500 mA C 1)Collector power dissipation P 350 mW C 1)Thermal resistance from junction to ambient R 555 C/W JA 2)Operating junction and storage temperature range T , T -55 ~ 150 C j stgELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) j Parameter Symbol Test condition Min Ty