afn04n60t220ft afn04n60t220t afn04n60t251t.pdf datasheet:

AFN04N60 Alfa-MOS 600V / 4A N-Channel Technology Enhancement Mode MOSFET General Description Features AFN04N60 is an N-channel enhancement mode Power 600V/2A,RDS(ON)=2.4(MAX)@VGS=10V MOSFET which is produced using VDMOS technology. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-state Fast switching resistance, provide superior switching performance, and Improved dv/dt capability withstand high energy pulse in the avalanche and commutation mode. Application These devices are widely used in AC-DC power suppliers, LCD/LED TV DC-DC converters and H-bridge PWM motor drivers. Lighting Uninterruptible Power Supply Pin Description SYMBOL TO-251-3L TO-220-3L TO-220F-3L Absolute Maximum Ratings (Tc=25 Unless otherwise noted) Typical Parameter Symbol Uni