ap20gt60sw.pdf datasheet:

AP20GT60SWRoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 600VC High Speed Switching IC 20A Low Saturation VoltageVCE(sat),Typ.=1.8V@IC=20A CG Built-in Fast Recovery DiodeC TO-3PGEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 600 VVGE Gate-Emitter Voltage +20 VIC@TC=25 Collector Current 40 AIC@TC=100 Collector Current 20 AICM Pulsed Collector Current1 160 A1IDM Collector to Emitter Diode Forward Current 40 APD@TC=25 Maximum Power Dissipation 125 W oTSTG Storage Temperature Range -55 to 150 CoTJ Operating Junction Temperature Range 150 CoTL Maximum Lead Temp. for Soldering Purposes 300 C , 1/8" from case for 5 seconds .Notes:1. Pulse width limited by max. junction temperature .Thermal DataSymbol Pa