ap4435gj.pdf datasheet:

AP4435GJwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 40 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.022 at VGS = - 4.5 V - 35APPLICATIONSTO-251 Load SwitchS Battery SwitchGDP-Channel MOSFETG D STop ViewABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise notedParameter Symbol Limit UnitVDSDrain-Source Voltage - 30VVGSGate-Source Voltage 20TC = 25 C - 40TC = 70 C - 35Continuous Drain Current (TJ = 150 C) IDTA = 25 C - 30.0a, ba, bTA = 70 C - 28 AIDM- 150Pulsed Drain CurrentTC = 25 C - 3.5ISContinuous Source-Drain Diode CurrentTA = 25 C - 2.1a, bTC = 25 C 40TC = 70 C 32PDMaximum Power Dissipation WTA = 25 C 2.5a, bT