apt11gp60bdqb.pdf datasheet:

TYPICAL PERFORMANCE CURVES APT11GP60BDQBAPT11GP60BDQB600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GC CE Low Conduction Loss SSOA rated Low Gate ChargeG Ultrafast Tail Current shutoffEMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT11GP60BDQB UNITVCESCollector-Emitter Voltage600VoltsVGE Gate-Emitter Voltage20IC1 Continuous Collector Current @ TC = 25C 41IC2 Continuous Collector Current @ TC = 100C20 Amps1ICMPulsed Collector Current @ TC = 150C45Switching Safe Operating Area @ TJ = 150CSSOA45A @ 600VPD WattsTotal Power Dissip