apt13gp120bdq1g.pdf datasheet:

TYPICAL PERFORMANCE CURVES APT13GP120BDQ1(G) 1200V APT13GP120BDQ1 APT13GP120BDQ1G**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.GCE Low Conduction Loss 100 kHz operation @ 600V, 10A Low Gate Charge 50 kHz operation @ 600V, 16AC Ultrafast Tail Current shutoff RBSOA RatedGEMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified. Parameter UNITSymbol APT13GP120BDQ1(G)VCES Collector-Emitter Voltage1200VoltsVGEGate-Emitter Voltage20IC1Continuous Collector Current @ TC = 25C41IC2 Continuous Collector Current @ TC = 110C