apt13gp120bsc.pdf datasheet:

APT13GP120BSC1200V POWER MOS 7 IGBTA new generation of high voltage power IGBTs. Using punch-throughtechnology and a proprietary metal gate, this IGBT has been optimized for veryTO-247fast switching, making it ideal for high frequency, high voltage switch-modepower supplies and tail current sensitive applications. In many cases, thePOWER MOS 7 IGBT provides a lower cost alternative to a Power MOSFET. Low Conduction Loss 100 kHz operation @ 600V, 10AGC CE Low Gate Charge 50 kHz operation @ 600V, 16A Ultrafast Tail Current shutoff RBSOA RatedGEMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT13GP120BSC UNITVCES Collector-Emitter Voltage120020VGE Gate-Emitter Voltage Volts30VGEM Gate-Emitter Voltage TransientIC1 Continuous Collector Current @ TC = 25C 41IC2 Continuou