apt15gp60bdq1.pdf datasheet:

TYPICAL PERFORMANCE CURVES APT15GP60BDQ1APT15GP60BDQ1600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss 100 kHz operation @ 400V, 19AC Low Gate Charge 200 kHz operation @ 400V, 12AG Ultrafast Tail Current shutoff SSOA ratedEMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.UNITSymbol Parameter APT15GP60BDQ1VCESCollector-Emitter Voltage600VoltsVGE Gate-Emitter Voltage20IC1 Continuous Collector Current @ TC = 25C 56IC2 Continuous Collector Current @ TC = 110C Amps271ICMPulsed Collector Current @ TC = 150C65Switching Safe Operati