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apt20gn60bg apt20gn60sg.pdf datasheet:

apt20gn60bg_apt20gn60sgapt20gn60bg_apt20gn60sg

TYPICAL PERFORMANCE CURVESAPT20GN60B_S(G)APT20GN60B APT20GN60S APT20GN60B(G) APT20GN60S(G) 600V *G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra (B)low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a D3PAKslightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive design and minimizes losses. (S)CG EG 600V Field Stop CE Trench Gate: Low VCE(on) Easy Paralleling C 6s Short Circuit Capability 175C RatedGEApplications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified. ParameterSymbol UNIT

 

Keywords - ALL TRANSISTORS DATASHEET

 apt20gn60bg apt20gn60sg.pdf Design, MOSFET, Power

 apt20gn60bg apt20gn60sg.pdf RoHS Compliant, Service, Triacs, Semiconductor

 apt20gn60bg apt20gn60sg.pdf Database, Innovation, IC, Electricity

 

 
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