auirf1405.pdf datasheet:

PD - 97691AAUTOMOTIVE GRADEAUIRF1405FeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceDV(BR)DSS55Vl Dynamic dv/dt RatingRDS(on) typ.4.6ml 175C Operating Temperaturel Fast Switchingmax 5.3mGl Fully Avalanche RatedID (Silicon Limited)169Al Repetitive Avalanche AllowedSup to TjmaxID (Package Limited)75Al Lead-Free, RoHS Compliantl Automotive Qualified*DDescriptionSpecifically designed for Automotive applications,SDthis Stripe Planar design of HEXFET PowerGMOSFETs utilizes the latest processing techniques toTO-220ABachieve low on-resistance per silicon area. This benefitAUIRF1405combined with the fast switching speed andruggedized device design that HEXFET powerG D SMOSFETs are well known for, provides the designerGate Drain Sourcewith an extremely efficient and reliab