auirf1405zstrl.pdf datasheet:

PD - 97486AAUIRF1405ZSAUTOMOTIVE GRADEAUIRF1405ZLFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-Resistance DV(BR)DSS55Vl 175C Operating Temperaturel Fast SwitchingRDS(on) max.4.9mGl Repetitive Avalanche Allowed up toTjmax S ID150Al Lead-Free, RoHS Compliantl Automotive Qualified *DDDescriptionSpecifically designed for Automotive applications,this HEXFET Power MOSFET utilizes the latestSSprocessing techniques to achieve extremely low on-DDGGresistance per silicon area. Additional features ofthis design are a 175C junction operatingD2PakTO-262temperature, fast switching speed and improvedAUIRF1405ZSAUIRF1405ZLrepetitive avalanche rating . These features combineto make this design an extremely efficient and reliabledevice for use in Automotive applications and a wide GDS