auirf3205z auirf3205zs.pdf datasheet:

AUIRF3205Z AUTOMOTIVE GRADE AUIRF3205ZS HEXFET Power MOSFET Features VDSS 55V Advanced Process Technology Ultra Low On-Resistance RDS(on) max. 6.5m 175C Operating Temperature ID (Silicon Limited) 110A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A Lead-Free, RoHS Compliant Automotive Qualified * D Description S Specifically designed for Automotive applications, this HEXFET Power S D G MOSFET utilizes the latest processing techniques to achieve extremely low G on-resistance per silicon area. Additional features of this design are a 175C TO-220AB D2Pak junction operating temperature, fast switching speed and improved repetitive AUIRF3205Z AUIRF3205ZS avalanche rating . These features combine to make this design an extremely efficient and reliable dev