auirf3305.pdf datasheet:

AUTOMOTIVE GRADE AUIRF3305 Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance V(BR)DSS 55V 175C Operating Temperature Fast Switching RDS(on) max. 8.0m Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax ID 140A Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically designed for Automotive applications, this cellular S D design of HEXFET Power MOSFETs utilizes the latest G processing techniques to achieve low on-resistance per silicon TO-220AB area. This benefit combined with the fast switching speed and AUIRF3305 ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient G D Sand reliable device for use in Automotive and a wide variety of other applications. Gate Drai