auirf3315s.pdf datasheet:

PD - 97733AUTOMOTIVE GRADEAUIRF3315SFeaturesHEXFET Power MOSFETl Advanced Planar TechnologyDl Low On-ResistanceVDSS 150Vl Dynamic dV/dT Ratingl 175C Operating TemperatureRDS(on) max.82mGl Fast SwitchingID 21Al Fully Avalanche Rated Sl Repetitive Avalanche Allowed up toTjmaxl Lead-Free, RoHS Compliantl Automotive Qualified * DDescriptionSSpecifically designed for Automotive applications, DGthis cellular design of HEXFET Power MOSFETsutilizes the latest processing techniques to achieveD2Paklow on-resistance per silicon area. This benefitAUIRF3315Scombined with the fast switching speed and rugge-dized device design that HEXFET power MOSFETsGDSare well known for, provides the designer with anGate Drain Sourceextremely efficient and reliable device for use inAutomotive and a wide variety of other applicat