auirf3415.pdf datasheet:

PD - 97625AUTOMOTIVE GRADEAUIRF3415FeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceDV(BR)DSS150Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) max.0.042l Fast SwitchingGl Fully Avalanche RatedID43ASl Repetitive Avalanche Allowed up toTjmaxl Lead-Free, RoHS CompliantDl Automotive Qualified*SDescriptionDGSpecifically designed for Automotive applications,this cellular design of HEXFET Power MOSFETsTO-220AButilizes the latest processing techniques to achieve AUIRF3415low on-resistance per silicon area. This benefit com-bined with the fast switching speed and ruggedized GDSdevice design that HEXFET power MOSFETs are wellGate Drain Sourceknown for, provides the designer with an extremelyefficient and reliable device for use in Automotive anda wide variety of other appl