auirlr2905tr.pdf datasheet:

AUIRLR2905AUTOMOTIVE GRADEAUIRLU2905 Advanced Planar TechnologyHEXFET Power MOSFET Logic-Level Gate DriveDV(BR)DSS Low On-Resistance 55V Dynamic dV/dT RatingRDS(on) max.27m 175C Operating Temperature G Fast SwitchingID42AS Fully Avalanche Rated Repetitive Avalanche Allowed up to TjmaxD Lead-Free, RoHS Compliant Automotive QualifiedSSDescriptionDGGSpecifically designed for Automotive applications,D-PakI-Pakthis cellular design of HEXFET Power MOSFETsAUIRLRU2905AUIRLU2905utilizes the latest processing techniques to achievelow on-resistance per silicon area. This benefitGDScombined with the fast switching speed andGate Drain Sourceruggedized device design that HEXFET powerMOSFETs are well known for, provides the designerwith an extremely efficient and reliable device f