bc337 bc338.pdf datasheet:

SEMICONDUCTOR BC337/338 TECHNICAL DATABC337/BC338 TRANSISTOR (NPN) B CFEATURESHigh Current : IC=800mA.DC Current Gain : hFE=100 630 (VCE=1V, Ic=100mA).DIM MILLIMETERSFor Complementary with PNP type BC327.A 4.70 MAXEB 4.80 MAXGC 3.70 MAXDD 0.55 MAXE 1.00F 1.27MAXIMUM RATINGS (Ta=25 unless otherwise noted) G 0.85H 0.45_HJ 14.00 + 0.50L 2.30Symbol Parameter Value Unit F FM 0.51 MAXVCBO Collector-Base Voltage BC337 50V1 2 31. COLLECTORBC338 302. BASE3. EMITERVCEO Collector-Emitter Voltage BC337 45VBC338 25VEBO Emitter-Base Voltage 5 V TO-92IC Collector Current -Continuous 800 mA PD Total Device Dissipation 625 mW Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Coll