Todos los transistores

 

bc635 bc636 bc637 bc638 bc639 bc640.pdf datasheet:

bc635_bc636_bc637_bc638_bc639_bc640bc635_bc636_bc637_bc638_bc639_bc640

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPNBC636, 638, 640 PNPTO-92Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with "T"BCEHigh Current TransistorABSOLUTE MAXIMUM RATINGS (Ta=25C)BC635 BC637 BC639DESCRIPTION SYMBOLBC636 BC638 BC640 UNITVCEOCollector Emitter Voltage 45 60 80 VVCBOCollector Base Voltage 45 60 80 VEmitter Base Voltage VEBO 5.0 VCollector Current Continuous IC 1.0 ATotal Device Dissipation at Ta=25C PD 800 mWDerate Above 25C 6.4 mW/CTotal Device Dissipation at Ta=25C **PD 1.0 WTotal Device Dissipation at Tc=25C PD 2.75 WDerate Above 25C 22 mW/COperating And Storage Junction Tj, Tstg - 55 to +150 CTemperature RangeTHERMAL RESISTANCERth (j-c)Junction to Case 45 C/WRth

 

Keywords - ALL TRANSISTORS DATASHEET

 bc635 bc636 bc637 bc638 bc639 bc640.pdf Design, MOSFET, Power

 bc635 bc636 bc637 bc638 bc639 bc640.pdf RoHS Compliant, Service, Triacs, Semiconductor

 bc635 bc636 bc637 bc638 bc639 bc640.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.