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bc635 bc637 bc639.pdf datasheet:

bc635_bc637_bc639bc635_bc637_bc639

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC635/DHigh Current TransistorsBC635NPN SiliconBC637BC639COLLECTOR23BASE1EMITTER1MAXIMUM RATINGS23BC BC BC635 637 639Rating Symbol UnitCASE 2904, STYLE 14TO92 (TO226AA)CollectorEmitter Voltage VCEO 45 60 80 VdcCollectorBase Voltage VCBO 45 60 80 VdcEmitterBase Voltage VEBO 5.0 VdcCollector Current Continuous IC 0.5 AdcTotal Device Dissipation @ TA = 25C PD 625 mWDerate above 25C 5.0 mW/CTotal Device Dissipation @ TC = 25C PD 1.5 WattDerate above 25C 12 mW/COperating and Storage Junction TJ, Tstg 55 to +150 CTemperature RangeTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Ambient RqJA 200 C/WThermal Resistance, Junction to Case RqJC 83.3 C/WELECTRICAL CHARACTERISTICS (TA = 25

 

Keywords - ALL TRANSISTORS DATASHEET

 bc635 bc637 bc639.pdf Design, MOSFET, Power

 bc635 bc637 bc639.pdf RoHS Compliant, Service, Triacs, Semiconductor

 bc635 bc637 bc639.pdf Database, Innovation, IC, Electricity

 

 
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