bd136 bd138 bd140.pdf datasheet:

BD136/138/140Medium Power Linear and Switching Applications Complement to BD135, BD137 and BD139 respectivelyTO-12611. Emitter 2.Collector 3.BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : BD136 - 45 V : BD138 - 60 V : BD140 - 80 V VCEO Collector-Emitter Voltage : BD136 - 45 V : BD138 - 60 V : BD140 - 80 VVEBO Emitter-Base Voltage - 5 V IC Collector Current (DC) - 1.5 A ICP Collector Current (Pulse) - 3.0 AIB Base Current - 0.5 APC Collector Dissipation (TC=25C) 12.5 W PC Collector Dissipation (Ta=25C) 1.25 W TJ Junction Temperature 150 C TSTG Storage Temperature - 55 ~ 150 CElectrical Characteristics TC=25C unless otherwise notedSymbol Parameter Test Condition Min. Typ. Max. UnitsVCEO(sus) * Collector-Emitter Sustainin