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bf1100wr 0.pdf datasheet:

bf1100wr_0bf1100wr_0

DISCRETE SEMICONDUCTORSDATA SHEETBF1100WRDual-gate MOS-FET1995 Apr 25Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationDual-gate MOS-FET BF1100WRFEATURES PINNING Specially designed for use at 9 to 12 V supply voltagePIN SYMBOL DESCRIPTION Short channel transistor with high forward transfer1 s, b sourceadmittance to input capacitance ratio2 d drain Low noise gain controlled amplifier up to 1 GHz3g2 gate 2 Superior cross-modulation performance during AGC.4g1 gate 1APPLICATIONSdhandbook, halfpage VHF and UHF applications such as television tuners andprofessional communications equipment.3 4DESCRIPTIONg2Enhancement type field-effect transistor in a plasticg1microminiature SOT343R package. The transistorconsists of an amplifier MOS-FET

 

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