bf1108 bf1108r.pdf datasheet:

BF1108; BF1108RSilicon RF switchesRev. 04 29 May 2008 Product data sheet1. Product profile1.1 General descriptionThese switches are a combination of a depletion type Field-Effect Transistor (FET) and aband-switching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. Thelow loss and high isolation capabilities of these devices provide excellent RF switchingfunctions. The gate of the MOSFET can be isolated from ground with the diode, resultingin low losses. Integrated diodes between gate and source and between gate and drainprotect against excessive input voltage surges.CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be takenduring transport and handling.1.2 Features Specially designed for low loss RF switching up to 1 GHz1.3 Applications Various RF switching applications such as: Passive loop throug