bf1109 bf1109r bf1109wr 2.pdf datasheet:

DISCRETE SEMICONDUCTORSDATA SHEETBF1109; BF1109R; BF1109WRN-channel dual-gate MOS-FETsProduct specification 1997 Dec 08Supersedes data of 1997 Sep 03File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel dual-gate MOS-FETs BF1109; BF1109R; BF1109WRFEATURES PINNING Short channel transistor with highPIN DESCRIPTIONhandbook, 2 columns 43forward transfer admittance to input1 sourcecapacitance ratio2 drain Low noise gain controlled amplifier3 gate 2up to 1 GHz2 14 gate 1 Internal self-biasing circuit toTop view MSB035ensure good cross-modulationperformance during AGC and goodBF1109R marking code: NBp.DC stabilization.Fig.2 Simplified outlineAPPLICATIONS(SOT143R). VHF and UHF applications with 9 Vsupply voltage, such as televisiontuners and professionalcommunications equ