c945 sot-23.pdf datasheet:

C945 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Excellent hFE Linearity: hFE(IC=0.1mA) hFE(IC=2mA)=0.95(Typ.) Low noise Complementary to A733 MARKING:CR Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 VVEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNITCollector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 60 VCollector-emitter breakdown voltage V(BR)CEO IC=1mA , IB=0 50 VEmitter-base breakdown voltage V(BR)EBO IE=0.1mA, IC=0 5