cet4435a.pdf datasheet:

CET4435AP-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -8.8A, RDS(ON) = 24m @VGS = -10V. RDS(ON) = 35m @VGS = -4.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead free product is acquired.SOT-223 package.GDSDGSOT-223SABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Voltage VDS -30 VGate-Source Voltage VGS 20 VDrain Current-Continuous ID -8.8 ADrain Current-Pulsed a IDM -35 AMaximum Power Dissipation PD 3 WOperating and Store Temperature Range TJ,Tstg -55 to 150 CThermal CharacteristicsParameter Symbol Limit UnitsThermal Resistance, Junction-to-Ambient b RJA 42 C/WRev 1. 2006.JanuarySpecification and data are subject to change without notice . http://www.cetsemi.com7 - 42CET4435AElectrical Characteristics TA = 25 C un