cjac10h02.pdf datasheet:

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB56-8L Plastic-Encapsulate MOSFETS CJAC10H0 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX PDFNWB56-8L 2.0m@4.5V20 V100A2.4m@2.5VDESCRIPTION The CJAC10H02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES High density cell design for ultra low RDS(ON) Excellent package for good heat dissipation Fully characterized avalanche voltage and Special process technology for high ESD current capability Good stability and uniformity with high EAS APPLICATIONS SMPS and general purpose applications Power switching application Hard switched and high frequency circuits Uninterruptible power supply MARKING EQUIVALENT CIRCUIT D D D D D8 7 6 5