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cjac13th06.pdf datasheet:

cjac13th06cjac13th06

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PQFN 56-8L Plastic-Encapsulate MOSFETS CJAC13TH06 N-Channel Power MOSFETV(BR)DSS RDS(on)MAX ID PQFN 56-8L 3m@10V60V 130A4.5m@4.5VDESCRIPTION The CJAC13TH06 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES High Power and current handing capability Good stability and uniformity with high EAS Load switch Excellent package for good heat dissipation High density cell design for ultra low RDS(ON) Lead free product is acquiredAPPLICATIONS SMPS and general purpose applications Uninterruptible Power Supply Hard switched and high frequency circuits Power managementMARKING EQUIVALENT CIRCUIT D D D D8 7 6 5CJAC13TH06 = Part No. CJACSolid dot=Pin1

 

Keywords - ALL TRANSISTORS DATASHEET

 cjac13th06.pdf Design, MOSFET, Power

 cjac13th06.pdf RoHS Compliant, Service, Triacs, Semiconductor

 cjac13th06.pdf Database, Innovation, IC, Electricity

 

 
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