cjp04n60.pdf datasheet:

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP04N60 600V N-Channel Power MOSFET TO-220-3L General Description This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode wigh fast 1. GATE recovery time. Desighed for high voltage, high speed switching 2. DRAIN applications such as power supplies, converters, power motor controls 3. SOURCE and bridge circuits. FEATURE High Current Rating Lower Rds(on) Lower Capacitance Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value UnitsDrain-Source Voltage VDS 600 V Gate-Source Voltage VGSS 30 Continuous Drain Current