cjp04n60a.pdf datasheet:

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP04N60A N-Channel Power MOSFET TO-220-3L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. 1. GATE FEATURE 2. DRAIN High Current Rating 3. SOURCE Lower RDS(on) Lower Capacitance Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value UnitDrain-Source Voltage VDS 600 V Gate-Source Voltage VGS 30Continuous Drain Current ID 4.0A Puls