cjp10n65.pdf datasheet:

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP10N65 N-Channel Power MOSFET TO-220-3L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. 1. GATE FEATURE 2. DRAIN High Current Rating 3. SOURCE Low Gate Charge Lower RDS(on) Low Reverse Transfer Capacitance Fast Switching Capability Tighter VSD Specifications Avalanche Energy Specified Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value UnitDrain-Source Voltage VDS 650 V Gate-Source Voltage VGS 30Conti